Xi'an Jiaotong University develops polycrystalline dense silicon carbide ceramic materials

Recently, Dr. Dai Peifu, a doctoral student of the Institute of Advanced Ceramics, School of Materials Science and Engineering, Xi'an Jiaotong University, successfully fabricated a polycrystalline dense silicon carbide ceramic material by physical vapor transport under the guidance of Prof. Yang Jianfeng. For the first time, the conditions for adding sintering aids were not required. The achievement of a pure silicon carbide bulk ceramic material close to theoretical density indicates that Xi’an Jiaotong University has made important progress in ceramic research.

The physical vapor transport method (HTPVT) is a common method for preparing single crystal silicon carbide. Based on the research of silicon carbide single crystal materials in the Institute of Materials Science, Dai Peixi conducted comparative tests of different material densities and sintering processes in research work and established The growth model of silicon carbide polycrystalline ceramics is explained, and the principle of polycrystalline silicon carbide growth is explained from the perspective of thermodynamics and kinetics. This method is completely different from the existing silicon carbide ceramic preparation process. The obtained material has excellent performance and has a good application prospect in the military, electronics, machinery and other industries. This technology has applied for national invention patents.