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Since it is difficult to ensure the uniformity of the carbon atom structure inside the film when the graphite film is directly formed on the silicon substrate, the method for the graphite circuit in the past is generally to first fabricate the circuit on the graphite sheet, and then use the graphite sheet to specialize. The method is bonded to the substrate, which is called the graphite graphite (Flaked Graphene). But this time the EOC scientists used a process called silicon sublimation. The technology removes the silicon from the silicon carbide on the surface of the substrate, which results in a pure graphite film directly on the surface of the substrate.
However, the "silicon sublimation" manufacturing technology is not the first of EOC. The former has used similar technology to produce graphite film, but EOC is the first group to produce graphite film on a 4-inch substrate. In addition to the silicon sublimation technology used this time, EOC is also developing other graphite film manufacturing processes to enable these processes to be applied to 8-inch (200mm) substrates.
American scientists make graphite film on a 4-inch substrate
Researchers at the Electro-Optics Center Materials Division (EOC) have recently succeeded in producing graphite films on a 4 inch (100 mm) substrate. The graphite film is a flat film composed of carbon atoms. The thickness is extremely thin, only 1-2 carbon atoms thicker. Compared with the conventional epitaxially grown silicon film, the carbon atom structure inside the graphite film can greatly improve the electrical performance of the circuit, and the operating speed of the circuit can reach the silicon circuit. 100 times.