Energy-saving new force: 3-inch semi-insulating silicon carbide single crystal growth technology

A new generation of functional materials summary information "Long-term Scientific and Technological Development Plan" of the device, military supporting key materials and engineering, etc., are the third generation of semiconductor - silicon carbide crystals related to "Plan" will " Energy efficient, long life semiconductor lighting products"...
The new generation of information functional materials, devices, military supporting key materials and engineering in the Outline of the National Medium- and Long-Term Science and Technology Development Plan are related to the third-generation semiconductor, silicon carbide crystal, and the "Planning Outline" will be "efficient." Energy-saving, long-life semiconductor lighting products are included in the first key areas of medium and long-term planning. As a basic raw material for many industries, SiC crystals are widely used in a new generation of high-efficiency and energy-saving power electronic devices. The development, design, manufacture and application of new SiC power electronic devices are energy-saving, development of energy-efficient, long-life semiconductors. Important measures for lighting products.

As a new energy material enterprise mainly engaged in R&D, production and sales of silicon carbide single crystals (sheets), Deqing Prefecture has independently developed “3-inch semi-insulating silicon carbide single crystal growth technology”, which has been evaluated and certified by national scientific and technological achievements. Advanced level.

Break through the bottleneck and create a brand

According to reports, at present, 90%~95% of silicon carbide wafers in the world are used for optoelectronic material LED manufacturing. It is estimated that in 2016, the global silicon carbide wafer output value will reach 2 billion US dollars, and silicon carbide (SiC) silicon wafer based materials will be used. The global market size of the industry will reach US$6 billion. Only Cree, USA, produces silicon carbide single wafers. In 2012, production increased to more than 90% of global production, about 600,000. Countries around the world attach great importance to the research of SiC, and have invested heavily in the development of silicon carbide semiconductor devices.

Silicon carbide is an inorganic non-metallic material, also known as gold steel sand or refractory sand. It is made of quartz sand, petroleum coke or coal coke and other raw materials in a resistance furnace. It has high hardness and excellent thermal conductivity and electrical conductivity. It can resist oxidation at high temperatures. Its semi-insulation and stability have become an irreplaceable basic raw material for the manufacture of special materials, and are widely used in the manufacture of high temperature and high voltage semiconductors. High-purity silicon carbide is used in important industries such as military, aerospace, nuclear power and electric power, and its development significance and value are very important.

The result of the project can prepare large-area wafers, improve the preparation efficiency of unit finished products, high purity of silicon carbide powder, reaching 99.999%, easy to realize large-scale production, adopt one-time synthesis method, less process flow, simple production, easy operation and control Reducing defect density such as microtubes and dislocations, and growing high-quality bulk silicon carbide single crystals... Deqing State Crystal realized silicon carbide raw materials, crystal growth furnaces, crystal growth through innovative breakthroughs in technology, structure, process and theory. A series of technologies such as control technology and technology to reduce high-purity raw material impurities, especially high-temperature and low-pressure crystal growth control technology, achieve axial temperature gradient, radial temperature gradient and pressure level under high temperature and low pressure conditions of 2300 °C The regulation makes the 3-inch semi-insulating silicon carbide single wafer semi-insulating and can also be used for epitaxial growth. The Hall coefficient of the wafer has a carrier density of 1.04E12/cm 2 and a resistivity of 100492 ohm cm. The resistance exceeds the technical standard of the Cree device. The wafer reaches a level of no microtubules.

As a new energy-saving force, Deqing Prefecture has 3 national invention patents and a number of core technologies. Strategic cooperation with some of the more powerful electronic devices, microwave devices and LED-related enterprises in China. At present, it is established in the production base of Deqing County Science and Technology Pioneer Park in Zhejiang Province. It has complete X-ray oriented, multi-line cutting, grinding and polishing line processing equipment for silicon carbide single crystal, with technology research and development, production, sales and after-sales service. The system structure was initially formed.

In many developed countries, 75% of the electricity is converted or controlled by power electronics technology. At present, the power used by China in transformation or control is only 30%. Far from meeting the energy-saving level that power electronics should play, it is especially necessary to find a solution on silicon carbide crystals, an important raw material for power electronics.

Power electronic technology is a technology that uses power electronic devices to transform and control electrical energy. According to the needs of the application field, the voltage, current and frequency are adjusted to save energy. Widely used power electronics technology to improve power transmission methods, using silicon carbide substrates to manufacture power electronic devices, can greatly reduce the power loss of power systems, improve power efficiency, and reduce the size of power systems, compared with traditional silicon devices. Improve the reliability of system operation and system cost, provide technical support for industrial upgrading and energy saving.

It is understood that this century, some developed countries in the world will have to use power electronic technology to transform or control the use of electrical energy efficiency, which will reach more than 95%. China's current high-voltage power electronic device development requires micro-tube-free silicon carbide single wafer, semi-insulating silicon carbide substrate, power electronic silicon carbide single crystal substrate, and epitaxial substrate used by downstream R&D units and enterprises. Relying on imports greatly increases costs. In 2013, China's market demand was about 30,000 3-inch SiC wafers. In 2016, according to relevant experts' prediction, the market demand is about 100,000 3-inch SiC wafers, and the electronics industry based on silicon carbide (SiC) silicon wafers. The market size will reach 6 billion yuan, and the demand will be greatly improved. It can be seen that Deqing's crystal 3-inch semi-insulating silicon carbide single crystal growth technology will usher in a huge market opportunity. At the same time, this will also play a potential role in stimulating China's overall industrial economic upgrading.

The energy shortage poses a severe challenge to the survival and development of human beings. The large-scale use of energy raw materials is slowly drying up, and the corresponding is the low efficiency of new energy utilization, and with the continuous improvement of human living standards, the effective energy Demand is increasing rapidly, and it is extremely urgent to develop clean energy and improve its efficiency.

It is understood that Deqing Prefecture will be fully equipped to build 100 sets of 4~6 inch crystal growth furnaces, with a production capacity of 100,000 pieces per year and an expected total output value of more than 2 billion yuan of silicon carbide single crystal (sheet) production enterprises. Create a third-generation semiconductor industrial park, form the third-generation semiconductor industry chain, realize the transformation and upgrading of the traditional economy, and create maximum value. The 3-inch semi-insulating silicon carbide single crystal growth technology developed by Deqing Jingjing also has broad application prospects in the field of LED devices.

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